Ultra-flexible, "invisible" thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends.
نویسندگان
چکیده
Ultra-flexible and transparent metal oxide transistors are developed by doping In2 O3 films with poly(vinylphenole) (PVP). By adjusting the In2 O3 :PVP weight ratio, crystallization is frustrated, and conducting pathways for efficient charge transport are maintained. In2 O3 :5%PVP-based transistors exhibit mobilities approaching 11 cm(2) V(-1) s(-1) before, and retain up to ca. 90% performance after 100 bending/relaxing cycles at a radius of 10 mm.
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ورودعنوان ژورنال:
- Advanced materials
دوره 27 14 شماره
صفحات -
تاریخ انتشار 2015